F.E.Cellier - Veröffentlichungen betreffend Elektronische Schaltungen und Festkörperphysik

Bücher

  1. Cellier, F.E. (1991), Continuous System Modeling, Springer-Verlag, New York.

Kapitel in Büchern

  1. Cellier, F.E. (1993), Integrated Continuous-System Modeling and Simulation Environments, CAD for Control Systems (D. Linkens, ed.), Marcel Dekker, New York, pp.1-29.

Zeitschriftenartikel

  1. Cellier, F.E., and H. Elmqvist (1993), Automated Formula Manipulation Supports Object-Oriented Continuous-System Modeling, IEEE Control Systems, 13(2), pp.28-38.

  2. Davis, K.R., R.D. Schrimpf, F.E. Cellier, K.F. Galloway, D.I. Burton, and C.F. Wheatley, Jr. (1989), The Effects of Ionizing Radiation on Power-MOSFET Termination Structures, IEEE Trans. Nuclear Science, 36(6), pp.2104-2109.

  3. Kosier, S.L., R.D. Schrimpf, F.E. Cellier, and K.F. Galloway (1990), The Effects of Ionizing Radiation on the Breakdown Voltage of P-Channel Power MOSFETs, IEEE Trans. Nuclear Science, 37(6), pp.2076-2082.

  4. Kosier, S.L., R.D. Schrimpf, K.F. Galloway, and F.E. Cellier (1991), Predicting Worst-Case Charge Buildup in Power-Device Field Oxides, IEEE Trans. Nuclear Science, 38(6), pp.1383-1390.

  5. Wu, Q.M., and F.E. Cellier (1986), Simulation of High-Voltage Bipolar Devices in the Neighborhood of Breakdown, Mathematics and Computers in Simulation, 28, pp.271-284.

  6. Wu, Q.M., C.M. Yen, and F.E. Cellier (1989), Analysis of Breakdown Phenomena in High-Voltage Bipolar Devices, Transactions of SCS, 6(1), pp.43-60.

Hauptvorträge bei Tagungen

  1. Cellier, F.E., C. Clauß and A. Urquía (2007), Electronic Circuit Modeling and Simulation in Modelica, Proc. 6th Eurosim Congress on Modelling and Simulation, Ljubljana, Slovenia, Vol.2, pp. 1-10.

  2. Cellier, F.E., and H. Elmqvist (1992), The Need for Automated Formula Manipulation in Object-Oriented Continuous-System Modeling, Proc. CACSD'92, IEEE Computer-Aided Control System Design Conference, Napa, CA, pp.1-8.

  3. Elmqvist, H., F.E. Cellier, and M. Otter (1993), Object-Oriented Modeling of Hybrid Systems, Proc. ESS'93, SCS European Simulation Symposium, Delft, The Netherlands, pp.xxxi-xli.

Andere Tagungsbeiträge

  1. Cellier, F.E., M. Otter, and H. Elmqvist (1995), Bond Graph Modeling of Variable Structure Systems, Proc. ICBGM'95, 2nd SCS Intl. Conf. on Bond Graph Modeling and Simulation, Las Vegas, NV, pp.49-55.

  2. Davis, K.R., R.D. Schrimpf, F.E. Cellier, K.F. Galloway, D.I. Burton, and C.F. Wheatley, Jr. (1989), The Effects of Ionizing Radiation on Power-MOSFET Termination Structures, Proc. IEEE Nuclear and Space Radiation Effects Conference, Marco Island, FL.

  3. de Albornoz, A., J. Sardá, and F.E. Cellier (1994), Structure Identification in Variable Structure Systems by Means of Qualitative Simulation, Proc. ESM'94, European Simulation MultiConference, Barcelona, Spain, pp.486-491.

  4. Elmqvist, H., F.E. Cellier, and M. Otter (1994), Object-Oriented Modeling of Power-Electronic Circuits Using Dymola, Proc. CISS'94, First Joint Conference of International Simulation Societies, Zurich, Switzerland, pp.156-161.

  5. Glaser, J.S., F.E. Cellier, and A.F. Witulski (1995), Object-Oriented Switching Power Converter Modeling Using Dymola With Event-Handling, Proc. OOS'95, SCS Object-Oriented Simulation Conference, Las Vegas, NV, pp.141-146.

  6. Glaser, J.S., F.E. Cellier, and A.F. Witulski (1995), Object-Oriented Power System Modeling Using the Dymola Modeling Language, Proc. Power Electronics Specialists Conference, Atlanta, GA, Vol.II, pp.837-843.

  7. Hild, D.R., and F.E. Cellier (1994), Object-Oriented Electronic Circuit Modeling Using Dymola, Proc. OOS'94, SCS Object Oriented Simulation Conference, Tempe, AZ, pp.68-75.

  8. Kosier, S.L., R.D. Schrimpf, F.E. Cellier, and K.F. Galloway (1990), The Effects of Ionizing Radiation on the Breakdown Voltage of P-Channel Power MOSFETs, Proc. IEEE Nuclear and Space Radiation Effects Conference, Reno, NV.

  9. Kosier, S.L., R.D. Schrimpf, K.F. Galloway, and F.E. Cellier (1991), Predicting Worst-Case Charge Buildup in Power-Device Field Oxides, Proc. IEEE Nuclear and Space Radiation Effects Conference, San Diego, CA.

  10. Kosier, S.L., D. Zupac, R.D. Schrimpf, F.E. Cellier, K.F. Galloway, M.N. Darwish, C.A. Goodwin, and M.C. Dolly (1990), Optimization of a Two-Level Field-Plate Termination Structure for Integrated-Power Applications in Ionizing Radiation Environments, Proc. GOMAC'90, Government Microcircuit Applications Conference, Las Vegas, NV, pp.435-438.

  11. Schweisguth, M.C., and F.E. Cellier (1999), A Bond Graph Model of the Bipolar Junction Transistor, Proc. ICBGM'99, 4th SCS Intl. Conf. on Bond Graph Modeling and Simulation, San Francisco, CA, pp.344-349.

  12. Wu, Q.M., and F.E. Cellier (1987), A Device Simulation Tool for High-Voltage Bipolar Devices, Proc. IEEE Symp. Circuits and Systems, Philadelphia, PA, Vol.2, pp.612-616.

Dissertationen

MS Arbeiten

  1. Davis, K.R. (1989), Two-Dimensional Simulation of the Effects of Total Dose Ionizing Radiation on Power-MOSFET Breakdown, Dept. of Electr. & Comp. Engr., University of Arizona, Tucson, AZ.

  2. Hild, D.R. (1993), Circuit Modeling in Dymola, Dept. of Electr. & Comp. Engr., University of Arizona, Tucson, AZ.

  3. Hu, L.A. (1991), DBDF: An Implicit Numerical Differentiation Algorithm for Integrated Circuit Simulation, Dept. of Electr. & Comp. Engr., University of Arizona, Tucson, AZ.

  4. Kosier, S.L. (1990), Breakdown Behavior of Electronic Devices under the Influence of Total Dose Ionizing Radiation, Dept. of Electr. & Comp. Engr., University of Arizona, Tucson, AZ.

  5. Krebs, M. (1997), Modeling of Conditional Index Changes, Dept. of Electr. & Comp. Engr., University of Arizona, Tucson, AZ.

  6. Schöckle, M. (1992), Reimplementation of MMS in Dymola Using Bond Graphs, Dept. of Electr. & Comp. Engr., University of Arizona, Tucson, AZ.

  7. Schweisguth, M. C. (1997), Semiconductor Modeling with Bondgraphs, Dept. of Electr. & Comp. Engr., University of Arizona, Tucson, AZ.

  8. Tan, L.H. (1989), Two Dimensional Device Simulation of Junction Termination Structures for Determination of Breakdown Behavior, Dept. of Electr. & Comp. Engr., University of Arizona, Tucson, AZ.

  9. Yen, C.M. (1988), Two-Dimensional Simulation of Power MOSFET Near Breakdown, Dept. of Electr. & Comp. Engr., University of Arizona, Tucson, AZ.

Interne Berichte

  1. Wu, Q.M., and F.E. Cellier (1987), HVDS: A High-Voltage Bipolar Device Simulator, Report CERL-87/02, Dept. of Electr. & Comp. Engr., University of Arizona, Tucson, AZ.

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Modifiziert: 29. Juni 2010 -- © François Cellier