Two-Dimensional Simulation of Power MOSFET Near Breakdown
- Chimin Yen
99, North Changjiang Road
Room 104, Building 23
Kunshan, Jiangsu Province, 215300
People's Republic of China
Email:
YChimin2000@Yahoo.Com
Abstract
A simulation program has been developed to facilitate the investigation and
analysis of power semiconductor devices under the reverse-bias condition. The
electrostatic potential distribution is solved by using Poisson's equation
alone, with particular attention to the neighborhood of the avalanche breakdown.
Because of its generality and efficiency, the program emerges as a powerful
engineering tool for the design of power devices incorporating special junction
termination techniques. Results are presented for a DMOS structure to
illustrate the improvement in breakdown voltage when a field plate is
applied.
Numerical solution techniques for solving elliptic partial differential
equations in multi-material domain are discussed. The discretization of
this domain is nonuniform in general due to its highly nonuniform physical
parameters. By careful selection of grid lines near interfaces, the difference
equation coefficients are considerably simplified. The resultant matrix of
coefficients is symmetric even though Neumann boundary conditions are specified.
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Last modified: June 5, 2005 -- © François Cellier