Two-Dimensional Simulation of the Effects of Total Dose
Ionizing Radiation on Power-MOSFET Breakdown
Abstract
The effects of ionizing radiation on the breakdown-voltage degradation
of power-MOSFET termination structures were examined through
two-dimensional simulation. A wide variety of sensitivity to
surface-charge density was found for various devices employing floating
field rings and/or equipotential field plates. Termination structures
that were both insensitive to surface charge and possessed a high
breakdown voltage were identified. The results were compared with
measurements made on selected structures.
The principal ionizing radiation damaging mechanisms in MOS devices are
discussed. Modifications made to an existing simulation program in
order to simulate these complex field ring and field plate structures
are described. Background information into how these termination
structures improve the breakdown voltage and their sensitivities to
positive interface charge is investigated.
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Last modified: June 11, 2010 -- © François Cellier